Glass RITEK with ITO

Item

Specification

Non-Polished

Polished

Effective area

Area except 10 mm from all edge

Dirt

Is not allowed.(but can be removed by washing process is OK)

Scratch

  ITO Side  

Width(mm)

total length

Width(mm)

total length

< 0.03

0.03~0.1

>0.1

Ignore

≦550 mm/m²
Not allowed

< 0.01

0.01~0.05

>0.05

Ignore

≦320 mm/m²
Not allowed

  Glass Side    

  < 0.03

0.03~0.1

>0.1

  Ignore

≦1100 mm/m²
Not allowed

< 0.02

0.02~0.1

>0.1

  Ignore

≦640 mm/m²
Not allowed

Dent,Open bubble

ITO Side

Size(mm)

Density(pcs/pc)

Size(mm)

Density(pcs/pc)

≦0.3

>0.3

Ignore

Not allowed

≦0.3

>0.3

Ignore

Not allowed

  Glass Side

 ≦0.3

0.3~0.5

>0.5 mm

  Ignore
≦2 pcs/sheet
Not allowed

  ≦0.3

0.3~0.5

>0.5

  Ignore

≦2 pcs/sheet

Not allowed

Bubble

Size(mm)

Density(pcs/pc)

Size(mm)

Density(pcs/pc)

<0.2

0.2~0.3

>0.3

Ignored

≦2 pcs/sheet

Not allowed

<0.2

0.2~0.3

>0.3

Ignored

≦2 pcs/sheet

Not allowed

Foreign material

Size(mm)

Density(pcs/pc)

Size(mm)

Density(pcs/pc)

<0.2

0.2~0.3

>0.3

Ignored

≦2 pcs/sheet

Not allowed (but can be removed by washing process is acceptable)

<0.2

0.2~0.3

>0.3

Ignored

≦2 pcs/sheet

Not allowed (but can be removed by washing process is acceptable)

Edge chips

width(mm)

width(mm)

A

B

C

≦2

≦1

≦T/2

A

B

C

≦2

≦1

≦T/2

Pin Hole

Size(mm)

Density(pcs/pc)

Size(mm)

Density(pcs/pc)

Silicon Dioxide(SiO₂)

         70~73%

Aluminium Oxide(Al₂O₃)

         1.0~1.9%

Ferric Oxide(Fe₂O₃)

         0.08~0.14%

Calcium Oxide(CaO)

         7~12%

Magnesium Oxide(MgO)

         1.0~4.5%

Alkali Oxide(R₂O)

          13~15%

Index of refraction

   1.52

Transmittance

   91%(400~700nm)

Reflectance

   Approx. 4%(single face)

Specific heat

   0.18cal/g℃

Softening point

   Approx. 730℃

Strain point

   Approx. 500℃

Annealing

   Approx. 540℃

Thermal conductivity

   0.65kcal/mh℃

Coefficient of thermal expansion

   90×10^-7  (room temp. to 350℃)

Specific gravity

   2.5

Hardness

   6.5(Mohs'scale)

Item

Specification

Inspection method

Size (Length ×Width)

Refer to Drawing

Caliper

Effective area

Area except 10 mm from all edge

Thickness

Refer to Drawing

Micrometer

Warpness

T≧0.7: 100μm /100mmMAX
T＜0.7: 150μm /100mmMAX

Tokyo semitsu's surfcom

Edge seam

Refer to Drawing

Squareness Non-Polished Below 1.5/1000(d/L)

  Polished Below 1.0/1000(d/L)

Corner cut Non-Polished (refer to drawing)

  Polished (refer to drawing)

Coating Type

SiO₂ Thickness

ITO Thickness

Sheet resistance

Transmittance

(at 550 nm)

Heat resistance

(at 300℃)

Normal

Typical

Normal

Tolerance

Specified

Typical

Specified

Typical

nm

nm

nm

nm

Ω/□

Ω/□

%

%

Ω/□

120

≧20

25

21

5

≦120

100

≧86

87

≦360

100

≧20

25

23

5

≦100

80

≧86

87

≦300

080

≧20

25

25

5

≦80

65

≧84

86

≦240

060

≧20

25

33

5

≦60

50

≧82

84

≦150

050

≧20

25

40

7

≦50

40

≧81

83

≦130

030

≧20

25

65

10

≦30

24

≧80

81

≦60

020

≧20

25

100

15

≦20

15

≧83

85

≦40

015

≧20

25

125

15

≦15

12

≧87

89

≦30

012

≧20

25

150

20

≦12

10

≧86

88

≦20

SiO₂ Layer

Chemical resistance in HF

HF(40%):HNO₃(65%):H₂O＝15g:10g:500g at 23 ±1℃

Etching rate≦15 nm/min

ITO Layer

Heat resistance

Sheet resistance after a holding at 300℃ for 30min and cool down for 50min in ambient air.

Refer to the coating specification table.

Chemical resistance in NaOH

Change of sheet resistance after a treatment at 55℃,5%NaOH for 30min with ultrasonic agitation.

Within 10% of the initial value

Humidity stability

Change of sheet resistance after a treatment at 60℃ and 90%RH for 24 hours.

Within 10% of the initial value

Adhesive tape test

According to MIL-M-13508 4.4.6. Change in appearance visible with the unaided eye .Under normal illumination.

No change in appearance

Rubber test

According to MIL C-675-A 4.6.11,rubber according to MIL E-12397-B.Change in appearance visible with the unaided eye under normal illumination.

No change in appearance

Etchability in HCl

Etch rate in HCl(35%):HNO₃(65%):H₂O=1:0.08:1 at 50 ±2℃.

Etch rate：≧0.3 nm/sec